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4 3 0 !",#$%,&',()*,+,,-.
i 3V, Éï^_<ê/01vùnÔ6[\]。 f Ð ¿ À N < u 7, · Ô ¼ Å o 9 6 ¬ 3
« 1 ¿ Û Ä § Q (polysilicon) Ï ± ® ¯ 6.67V, &Æ:3 0.35V。
(Pt) 236[\], t°96¬½(40V}m), 2014k, ÇÈÉd [22-23] ÛÄÊË̾/¿À
r÷« TRW [18] 、 | « LAAS [14,19] ± y z § Q ¡ |yz TaN§¨, vMyzqºWYÍf、 ¿À
[8-9] [15]
v9, !«üwx^_ÿ E²³tü N、 ÎÏËÁÐ40dM TaNÑÒÓNE6[N<
Ryz Pt ¡v9, ãY 3。«¬ IJ=Ãi¨_, ÔÈimÕyz:Ñ;³ÖËE6
wtü [17,20] yz Cr 9¡, v9, Þ96 Ó×6ÃØ=Ã9, Ô9.Ù0Á, 9
¬f¾ 20V´µ。 ÚÛE。
2.2 ()*+RS^TU
[8,14-15,18]
[ 3 «1¿/0196[\]~bc`a 2.2.1 ()*+RS
Table3 Theignitionresistancematerialsanddesignsituationof MEMS9:;/01A MEMS9:;<=>Q
energyconversioncomponentsathomeandabroad [8,14-15,18] μ m
@, «¿Ü4GU{7^_:2, Ô¡¢bc·HÝ
research resistance
thicknesswidthspacinglength ÞÕ`a、 7Ò、 6[¸dKL, q¡¢`a
institutions materials
<bcbÁcÓdeßà, fg0Ái, X
TRW inAmerican polysilicon 0.5 20 6 400
LAASinFrance polysilicon 0.5 70 50 3600 ,O'o90Á。
KoreaAdvanceInstitute ì 2003 k ÷ « k ä k l ñ ò, ÷ « á â
Pt 0.1 40 40 4000
ofScience&Technology
(ARDEC) ã ï ù n i Ä Î 4 0 o p Q (Micro
TsinghuaUniversity Pt - 30 30 5000
EnergeticInitiators) á â < MEMS/ 0 1 ` a 、
o9ä@}~/01ÐopÖÝÖ<D0åæu7,
3i¶·[¸'、 o96¬'¹©ºD<±®
¡¨/01,2010k, Q 213t<d [12-13,21] opºÐ^_çY 4, èéi 4Oêë<ì
=bc, v¹íi©ê/01<bcEF}~bc
ÛÄ»¼½¾/¿À78yzi NiCr §¨, MÔy
[¸, ví¡Gf}~6[\] [16] 。
2qºW<¿À、 ÁÂ:Ñ=Ãi¨Ä, ^_i§¨G
[16]
[ 4 ÄÎ40opQ(MEI) < MEMS /01opº
Table4 ThedevelopmentcourseofMEMSenergyconversioncomponentsusedinmicroenergeticinitiators(MEI) [16]
ARDEC/Tanner1stgenerationbridges ARDEC/Tanner2ndgenerationbridges
unit measuredresistance/ Ω voltage/V unit measuredresistance/ Ω voltage/V
4.7 10 1.6 3
2.8 10 3.6 4
54.6 9 2.4 2.5
2.8 6 3.6 4
ARDEC/Tanner3rdgenerationbridges ARDEC/Tanner4thgenerationbridges
unit measuredresistance/ Ω voltage/V unit measuredresistance/ Ω voltage/V
=1.43
1.3 3.0 1.1
s =0.068
=1.54
1.8 2.5 2.3
s=0.056
=1.23
1.5 2.75 1.8
s=0.051
=1.45
1.9 3.0 1.5
s =0.213
ChineseJournalofEnergeticMaterials,Vol.25,No.5,2017(428-436) !"#$ www.energeticmaterials.org.cn