Page 131 - 《含能材料》火工品技术合集 2015~2019
P. 131

9 6 2                                                                !",#$,%&,'(),*+,,-./

         ðk阙。Br=Óþ¥01230efgTUv                              [5] 'P.SCB1 2 3 ¡ 0、 Ÿ   ™ Ý š › C ç y ˆ ‰ Š : h i
                                                                  [D].þÿ:þÿ›2“!,2012.
         Â:hi, Eÿ9]ÿôµ:
                                                                  CHEN Fei.Researchonthedamagemechanism andreinforce
             (1) °±îï67:^k, ïk!0<、 0>QR                           menttechnologyofelectrostaticandRFonSCBexplosivede
         EZlÄ)cÏIJ:mŒ, QR0123 ( >                               vices[D].Nanjing:NanjingUniversityofScienceandTech
                                                                  nology,2012.
         `aÏ) éºOðCñˆê9:èR„u^1O‚0
                                                              [6] MILSTD461G.Requirementsforthecontrolofelectromagnet
         123( ¯æ123); Iý, €noèR„0                              ic interference characteristicsofsubsystemsand equipment
         123:p0e‘’Os|hi–—u^1O‚、 o                                 [S].2015.
                                                              [7] PantojaJJ,PenaN,MoraN,etal.Ontheelectromagneticsus
         BCD)EFD:0123?:;01230efg                                  ceptibilityofhotwirebased electroexplosive devicesto RF
         DÅÆ:§HÐÑ。                                                sources[J].IEEETransactionsonElectromagneticCompatibili
                                                                  ty,2013,55(4):754-763.
             (2) G0~òóôX(  PSpice) =Ò0123:
                                                              [8] MauriceA,MorseAO.Shieldedinitiator:USP2821139[P],
         0efgDTU?noh^ßé:—ßõw, ±åò                                 1958.
         óôX,“:7X•„ö)U÷Os, ɸø‹01                             [9] )z.¬­®¯123¡0Ÿ yˆ‰Šhi [D].þÿ:þ
                                                                  ÿ›2“!,2009.
         23:•„Eÿ^AòóºœVW7X)VW7Xh
                                                                  YELing.Researchonthereinforcementtechnologyofelectro
         ¦%SBVWßû¾¿:@AC”。                                        staticandRFonSCBexplosivedevices[D].Nanjing:Nanjing
             (3) °±B0123ÅÆ、 BCD)EFDÏH                             UniversityofScienceandTechnology,2009.
                                                             [10] NovotneyD B,WelchBM,EwickD W.Semiconductorbridge
         ³:n], Ž7X„VWTUG?01230ef
                                                                  developmentfor enhanced ESD and RF immunity[R].
         gDTU:LGH^kv=。(Z‰ªy22‹G                                  AIAA992417:1999.
                                                             [11] KingTL,TarbellW W.Pintopinelectrostaticdischargepro
         ^‹:VW7X(  TVS«¬­) Ž1ÿ5±56
                                                                  tection for semiconductor bridges[R]. SAND20022213:
         7:0123NOP( ¬­®¯123) !?à‡
                                                                  2002.
         p0e0123t„S、 ŽS、 ¶ÜOS)ucS                          [12] Ý".¬­®¯1230efg‰Šhi [D].þÿ:þÿ›
                                                                  2“!,2012.
         :—ßõw。úd÷jLÓhiNOP)VW7XK
                                                                  RENG Gang.Researchontheelectromagneticcompatibilityof
         Äy22‹:fgD、 ÉË:TU)›±œhiÏ                                 semiconductorbridge[D].Nanjing:NanjingUniversityofSci
         vÂ。                                                      enceandTechnology,2012.
                                                             [13] ShoresM W.Filter/shieldforelectroexplosivedevices:USP
             (4) B僄QR„0123:TU, ç;1š
                                                                  4592280[P],1986.
         ›ëê90123o¥LÀˆ«, H³TUG£ù                            [14] HendersonJH,BaginskiTA.AnRFinsensitivehybridelectro
         !êúû:ü½ýÉ, s¬eŽƒ67、 ƒ2‹¥01                               explosivedeviceincorporatinganintegralfilter[J].Industry
                                                                  Applications,IEEETransactionson,1996,32(2):465-470.
         230efgDTU!:÷Z。
                                                             [15] CHEN F,ZHOU B,QIN ZC,etal.EMCprotectionofSCBex
                                                                  plosivedevicesbyusingSMDbasedNTCthermistors[J].IEEE
         …†!?:                                                    TransactionsonElectromagneticCompatibility,2012,54(6):
          [1] #þÿ, #=ƒ, !"ÿ.0e‘’ô:0>QRŸ èR é                      1216-1221.
             hi[J].#ÿ›2“!!v,2010,30(6):647-650.              [16] #$, #*, +e, Ï.¥*\8¦Ÿè0&B¬­®¯0>
             LIGuilan,LIGuoxin,WANG Peilan.StudyoftheRFsensi  DO@A[J].¸O67,2014,22(6):808-812.
             tivityofelectroexplosivedevicesinEMI[J].Transactionsof  LIYong,LIKai,LIU Enliang,etal.InfluenceofNTC ther
             BeijingInstituteofTechnology,2010,30(6):647-650.     mistorsonelectroexplosiveperformancesofSCB[J].Chinese
          [2] GuilanL,FengZ,WeiyuM.Studyonradiofrequencydamage   JournalofEnergeticMaterials(HannengCailiao),2014,22
             effectsofelectroexplosivedevice[C]∥ Proceedingsofthe  (6):808-812.
             2014InternationalSymposium onElectromagneticCompatibili  [17] WeinleinJ,SanchezD,SalasJ.Electrostaticdischarge(ESD)
             ty(EMCEurope),Gothenburg,Sweden,2014.                protectionforalaserdiodeignitedactuator[R].SAND2003
          [3] ÝÞ, $%+, ~I, Ï.¡¢®67¥1230eÁqr‘                     2100:2003.
             ÷DTU:÷Z[J]. ì2!v,2014,35(9):1375-1380.         [18] FisherRJ.AseverehumanESDmodelforsafetyandhighrelia
             REN Wei,BAIYingwei,CHU Enyi,etal.Applicationofferrite  bilitysystem qualificationtesting[C] ∥ElectricalOverstressand
             materialinhotwireEED forimprovingitsadaptabilitytoelec  ElectrostaticDischargeSymposium Proceedings,1989.
             tromagneticenvironment[J].ActaArmamentaria,2014,35  [19] yz, %&, *+,.TVS «¬­Z嬭®¯¡0BCDh
             (9):1375-1380.                                       i[J].>ã76,2016,45(3):62-64.
          [4] $&', Ù(.¡0¹0B0123¯æ@A:àáhi [J].                     ZUO Chengling,ZHOUBin,DUWeiqiang.Electrostaticsafe
             123,2012(3):9-12.                                    tyofsemiconductorbridgewithexternaldiodes[J].Explosive
             BAIRuixiang,YAN Nan.Experimentalstudyontheeffectof  Materials,2016,45(3):62-64.
             ESD onEED bridgewire[J].InitiatorsandPyrotechnics,2012  [20] ~I, $%+, ÝÞ, Ï.0Ÿ123J"0eÁqr‘÷D
             (3):9-12.                                            TUvwhi[J].123,2013(4):15-17.


         ChineseJournalofEnergeticMaterials,Vol.25,No.11,2017(954-963)  !"#$          www.energeticmaterials.org.cn
   126   127   128   129   130   131   132   133   134   135   136