Page 34 - 《含能材料》火工品技术合集 2015~2019

472 徐聪，胡博，朱朋，叶迎华，沈瑞琪

京理工大学，2008. ［D］. 南京：南京理工大学，2016.
FANG Ye‐lin. Preliminary study on electromagnetic properties HU Bo. Research on the electro‐explosive plasma switch ap‐
of pulsed discharge plasma［D］. Nanjing：Nanjing University plied for explosive foil initiator［D］. Nanjing：Nanjing Univer‐
of Science and Technology，2008. sity of Science and Technology，2016.
［23］ 胡 博 . 适 用 于 爆 炸 箔 起 爆 器 的 电 爆 炸 等 离 子 体 开 关 技 术 研 究

Conduction Mechanism of the Single Shot Switch Based on Electro⁃explosion of Diode

XU Cong ，HU Bo ，ZHU Peng ，YE Ying⁃hua ，SHEN Rui⁃qi 1
1
2
1
1
（1. School of Chemical Engineering，Nanjing University of Science and Technology，Nanjing 210094，China；2. Chinese People′s Liberation Army Artillery
Air Defense Academy，Hefei 230031，China）
Abstract：Using microelectromechanical system （MEMS） technologies including magnetron sputtering，ultraviolet lithography
and chemical vapor deposition，two kinds of high‐voltage switches based on Schottky diode and p‐n diode were designed and
fabricated. Electrical characterizations were performed to investigate their performances under no‐load condition，which showed
that the current peaks of the two switches reached up to about 2000 A at 0.22 μF/1500 V and 0.22 μF/1200 V，respectively. The
influence of trigger capacitor，trigger voltage，main voltage，dielectric film thickness and bi‐diode structure on the conduction
performance of single shot switch was studied. It is revealed that the minimum trigger voltage decreased gradually with the in‐
crease of capacitance. Reducing the thickness of dielectric film，increasing the trigger voltage and main voltage are all beneficial
to improve the current peak. Besides，bi‐diode structure can also improve the current peak. Finally，according to the electrical
curves of single shot switch，its action process can be divided into three stages，namely the electro‐explosion of diode，the
breakdown of dielectric film and the rise of pulse current. The conduction mechanism and resistance model of single shot switch
were also established. The results indicate that the resistance of single shot switch is very low，almost negligible.
Key words：high‐voltage switch；single shot；electro‐explosion of diode；conduction mechanism；electrical resistance model；
MEMS
CLC number：TJ45 Document code：A DOI：10.11943/CJEM2018331

（责编：姜 梅）

Chinese Journal of Energetic Materials，Vol.27, No.6, 2019（465-472） 含能材料 www.energetic-materials.org.cn