Page 74 - 《含能材料》火工品技术合集 2015~2019
P. 74
微 芯 片 爆 炸 箔 起 爆 器 及 其 平 面 高 压 开 关 研 究 进 展 175
Materials,2011,40(3):22-25. [19] Chu K W,Scott G L. A comparison of high⁃voltage switches,
[6] Nerheim E,Hoff D. Integrated silicon secondary explosive det⁃ SAND99⁃0154[R]. Sandia National Laboratories,1999.
onator:US 4862803A[P]. 1989. [20] 曾庆轩,李守殿,袁士伟,等 . 爆炸箔起爆器用高压开关研究进
[7] Hebderson J H,Baginski T A. Two novel monolithic silicon 展[J]. 安全与环境学报,2011,11(1):202-205.
substrate slapper detonators[C]//Industry Applications Society ZENG Qing⁃xuan,LI Shou⁃dian,YUAN Shi⁃wei,et al. Re⁃
Meeting, 1993. Conference Record of the. IEEE, 1993,3: search progress of high⁃voltage switches in exploding foil initi⁃
2479-2482. ators[J]. Journal of Safety and Environment,2011,11(1):
[8] 施志贵,杨芳 . 硅集成冲击片雷管的研制[J]. 中国机械工程, 202-205.
2005,16(增刊):469-471. [21] 周密,孟庆英,韩克华,等 . 爆炸平面开关的设计及研究[J]. 火
SHI Zhi⁃gui,YANG Fang. Development of an integrated sili⁃ 工品,2012(6):12-14.
con slapper detonator[J]. China Mechanical Engineering, ZHOU Mi,MENG Qing⁃ying,HAN Ke⁃hua,et al. Design
2005,16(Suppl.):469-471. and research on exploding plane switch[J]. Initiators & Pyro⁃
[9] 郭菲,施志贵,蒋小华,等 . 硅集成爆炸箔组件起爆 HNS⁃IV 试验 technics,2012(6):12-14.
研究[J]. 火工品,2009(6):5-7. [22] Baginski T A, Thomas K A. A robust one⁃shot switch for
GUO Fei,SHI Zhi⁃gui,JIANG Xiao⁃hua,et al. The test research high⁃power pulse applications[EB / OL]. https://ndiastorage.
on the initiation of HNS⁃IV by an integrated silicon exploding blob.core.usgovcloudapi.net/ndia/2008/fuze/IIIABaginski.pdf
foil assembly[J]. Initiators & Pyrotechnics,2009(6):5-7. [23] Baginski T A, Thomas K A. A robust one⁃shot switch for
[10] 施志贵,郭菲,席仕伟,等 . 一种金属桥冲击片雷管集成制造方 high⁃power pulse applications[J]. IEEE Transactions on Power
法[J]. 火工品,2010(3):1-3. Electronics,2009,24(1):253-259.
SHI Zhi⁃gui,GUO Fei,XI Shi⁃wei,et al. A method for fabri⁃ [24] Xu C,Zhu P,Chen K,et al. A highly integrated conjoined sin⁃
cating an integrated metal slapper detonator[J]. Initiators & Py⁃ gle shot switch and exploding foil initiator chip based on
rotechnics,2010(3):1-3. MEMS technology[J]. IEEE Electron Device Letters,2017,38
[11] Desai A. Efficient exploding foil initiator and process for mak⁃ (11):1610-1613.
ing same:US 7938065[P]. 2011. [25] Earley L M,Scott G L. Low⁃cost,3 kV,triggered,stripline,
[12] 房旷,陈清畴,贺思敏,等 . 一种原位集成冲击片组件的制备及 surface⁃discharge switch [C]//Pulsed Power Conference,
飞片驱动性能[J]. 含能材料,2016,24(1):101-105. 1991. Digest of Technical Papers. Eighth IEEE International.
FANG Kuang,CHEN Qing⁃chou,HE Si⁃min,et al. Fabrica⁃ IEEE,1991:340-342.
tion and flyer driving capability of in⁃situ integrated exploding [26] Nerheim E. Integrated silicon plasma switch:US 4840122A
foil initiator[J]. Chinese Journal of Energetic Materials(Han⁃ [P]. 1989.
neng Cailiao),2016,24(1):101-105. [27] 张欢 . 平面固态高压单触发开关的设计、制作与性能研究[D].
[13] 曾庆轩,郑志猛,李明愉,等 . 爆炸箔芯片集成制造方法研究 南京理工大学,2012.
[J]. 火工品,2012(5):1-3. ZHANG Huan. Design,fabrication and performance study of
ZENG Qing⁃xuan,ZHENG Zhi⁃meng,LI Ming⁃yu,et al. Re⁃ planar solid⁃state high voltage single shot switch[D]. Nanjing
search on fabrication method of integrated slapper detonator University of Science and Technology,2012.
[J]. Initiators & Pyrotechnics,2012(5):1-3. [28] Bo H,Peng Z,Shen R,et al. Design and characterization of
[14] 李可为,褚恩义,薛艳,等 . 基于非硅微制造工艺的爆炸箔起爆 micro plane explosion switch with Al/CuO reactive multilayer
器研究[J]. 兵工学报,2017,38(2):261-266. films[J]. High Power Laser and Particle Beams,2015,27(2):
LI Ke⁃wei,CHU En⁃yi,XUE Yan,et al. Research on exploding 2563-2571.
foil initiator based on non⁃silicon MEMS technology[J]. Acta [29] 胡 博 . 适 用 于 爆 炸 箔 起 爆 器 的 电 爆 炸 等 离 子 体 开 关 技 术 研 究
Armamentarii,2017,38(2):261-266. [D]. 南京:南京理工大学,2016.
[15] 陈楷,徐聪,朱朋,等 . 加速膛与复合飞片对集成爆炸箔起爆器 HU Bo. Research on the electro⁃explosive plasma switch ap⁃
性能的影响[J]. 含能材料,2018,26(3):273-278. plied for explosive foil initiator[D]. Nanjing:Nanjing Univer⁃
CHEN Kai,XU Cong,ZHU Peng,et al. Influence of barrel sity of Science and Technology,2016.
and multilayer flyer of micro chip exploding foil initiator on its [30] 胡博,沈瑞琪 . 平面固态单触发高压开关电极形状优化与设计
performance[J]. Chinese Journal of Energetic Material(Han⁃ [C]//2012 全国兵器科学与技术博士生学术论坛 . 江苏,南京:
neng Cailiao),2018,26(3):273-278. 2012.
[16] 陈楷 . 集成爆炸箔起爆器与平面三电极高压开关技术研究[D]. HU Bo,SHEN Rui⁃qi. Optimization and design of electrode
南京:南京理工大学,2018. shape of planar solid⁃state high voltage single shot switch[C]//
CHEN Kai. Research on the technique of micro chip exploding 2012 National Doctoral Academic Forum for Armament Sci⁃
foil initiator and planar three electrodes high voltage switch[D]. ence and Technology. Jiang Su,Nan Jing:2012.
Nanjing:Nanjing University of Science and Technology,2018. [31] 朱朋,胡博,沈瑞琪,等 . 用于爆炸箔起爆器的肖特基结平面爆
[17] 童志义 . 低温共烧陶瓷技术现状与趋势[J]. 电子工业专用设备, 炸开关及其制备方法:CN,CN103344151A[P]. 2013.
2008,37(11):1-9. ZHU Peng,HU Bo,SHEN Rui⁃qi,et al. Planar explosion
TONG Zhi⁃yi. The technique status and trend of LTCC[J]. switch with SBD used for EFI and its preparation method:CN
Equipment for Electronic Products Manufacturing,2008,37 103344151A[P]. 2013.
(11):1-9. [32] Hu B,Jiao J,Zhu P,et al. Characterization of electrical explo⁃
[18] Zhu P,Chen K,Xu C,et al. Development of a monolithic mi⁃ sion of schottky diode for one⁃shot switch applications[J]. The
cro chip exploding foil initiator based on low temperature European Physical Journal⁃Applied Physics,2014,68(3):30801.
co⁃fired ceramic[J]. Sensors & Actuators A Physical,http://dx. [33] 胡博,李杰,朱朋,等 . 基于 Parylene C 的单触发开关性能实验
doi.org/10.1016/j.sna.2018.04.032. 研究[J]. 强激光与粒子束,2015,27(6):233-237.
CHINESE JOURNAL OF ENERGETIC MATERIALS 含能材料 2019 年 第 27 卷 第 2 期 (167-176)