In order to investigate the effects of modulation period on the thermal properties and firing properties of Al/MoO₃ reactive films, Al/MoO₃ reactive film with 3 μm thickness was deposited by magnetron sputtering. The modulation period of Al/MoO₃ reactive film was 50 nm, 150 nm and 300 nm, respectively. The reaction process and energy of Al/MoO₃ reactive films were measured by DSC. The combustion speed of Al/MoO₃ reactive films were detected by high-speed camera. The initiators were integrated Al/MoO₃ reactive film with semiconductor bridge and bridge wire, and the current-firing sensitivities and voltage-firing sensitivities were also explored by Langlie method. The combustion speed was decreased from 5.35 m·s^-1 to 1.75 m·s^-1 as the modulation period increased from 50 nm to 300 nm. The 50% firing current of semiconductor bridge initiators was 1.44 A, 1.74 A and 1.87 A, and the 50% firing current of bridge wire initiators was 0.08 A, 0.65 A and 1.02 A when the modulation period of Al/MoO₃ reactive films was 50 nm, 150 nm and 300 nm, respectively. The bridge wire initiator can ignite the insensitive ignition composition of B-KNO₃ tablet with 1 mm ignition gap. The excellent firing parameters and outstanding ignition ability can lead to a remarkable optimization for the traditional electronic initiators.