To investigate the parameter optimization problem of the transient voltage suppression diode (TVS) device used in the anti-electrostatics design of semiconductor bridge (SCB) initiator, a capacitor discharge ignition equivalent circuit and a SCB initiator model were established in the PSpice software. In the PSpice circuit simulation software, the influence law of TVS parameter variation on the electro-explosive performance of the SCB initiator was studied. The results show that for 22 μF/16 V capacitor discharge ignition circuit, the simulation circuit was in good agreement when the wire inductance was 40 nH, while the loop resistance is 3.3 mΩ, and the equivalent series resistance and inductance of tantalum capacitor is 288 mΩ and 0.68 μH, respectively. By comparing the electro-explosive curve and data, the SCB initiator model created by the impedance-energy list exhibited higher accuracy. There were two thresholds for the effect of TVS on the electro-explosive performance of SCB. The SCB failed to burst when the TVS breakdown voltage was less than 6 V. When the breakdown voltage of TVS was between 8-12 V, the SCB could burst normally even if the TVS breakdown voltage was lower than the voltage for the ignition of the semiconductor bridge. But the shunting effect caused by the breakdown of TVS caused the delay of burst time, and the delay time increased as the TVS breakdown voltage decreased.