To improve the ignition ability of semiconductor bridge (SCB), especially the ability to ignite insensitive compositions, Al/CuO_x multilayer film was fused and combined with semiconductor bridge by magnetron sputtering technology to form an energetic ignition device and the ignition sensitivity and ignition ability of the energetic ignition device were studied. The micro morphology and composition of Al/CuO_x multilayer films were studied by scanning electron microscopy (SEM), X-ray energy dispersive spectrometer (EDS) and X-ray diffractometer (XRD). Results show that the copper oxide film mainly exists in the form of black copper ore （Cu₂¹⁺ Cu₂¹⁺O₃）; the mass fractions of Al, Cu and O in the multilayer film are 28.8%, 32.5% and 38.7% respectively, and the ratio of Al to Cu atom is close to the theoretical ratio of 1∶1; the results obtained by differential scanning calorimeter(DSC) show that the quantity of heat release of Al/CuOx multilayer film is about 2175.4 J·g^-1. The burning rate of Al/CuO_x multilayer film is measured by high-speed photography is about 3.0 m·s^-1. The 50% ignition voltage of the energetic ignition device measured by Lanley′s method is 8.45 V and 99.9% ignition voltage is 12.39 V. The ignition ability experiment shows that when the ignition gap is 4 mm, the energetic device can ignite the insensitive ignition composition of B/KNO₃ tablets, which significantly improves the ignition ability of the semiconductor bridge.