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Fabrication and Performances of (B/Ti)n/TaN Thin-film Initiator Bridge
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(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China,Chengdu 610054, China)

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    Abstract:

    By using magnetron sputtering and micro-manufacturing technology, the(B/Ti)n/TaN thin-film initiator bridge was fabricated, with the 40 layers B/Ti multi-layers(4 mm×4 mm) deposited on TaN thin-film 80 μm×40 μm×2 μm initiator bridge contained 40 layers of B and Ti, where the first layer was 40 nm thickness B, and others were 200 nm B or Ti.The ignition performances of the samples were tested by a 47 μF tantalum capacitor with voltage of 40 V.Results show that the ignition delay time, input ignition energy, explosion temperature, duration time and height of flame for TaN thin-film initiator bridge are 85 μs, 15 mJ, 2500-3500 K, 0.15 ms, 5 mm, while, for(B/Ti)n/TaN thin-film initiator bridge, they are 37 μs, 6 mJ, 4000-8500 K, 0.25 ms, 10 mm, respectively.It is found that the introduction of B/Ti multi-layers can decrease the ignition delay time and input ignition energy, improve the ignition performances of TaN thin-film initiator bridge.

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蔡贤耀,蒋洪川,闫裔超,等.(B/Ti)n/TaN薄膜点火桥的制备及点火性能[J].含能材料,2015,23(3):265-269.
CAI Xian-yao, JIANG Hong-chuan, YAN Yi-chao, et al. Fabrication and Performances of (B/Ti)n/TaN Thin-film Initiator Bridge[J]. Chinese Journal of Energetic Materials,2015,23(3):265-269.

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History
  • Received:March 11,2014
  • Revised:May 05,2014
  • Adopted:May 23,2014
  • Online: March 09,2015
  • Published: March 10,2015