For the ignition reliability of the semiconductor bridge miniaturization, the electrical explosive process of composite semiconductor bridge (SCB) with different charging voltages under 22 μF were studied by high-speed digital oscilloscope. The electrical explosive performance of composite SCB was compared with that of polycrystalline silicon SCB. Results show that before erupting, the electrical explosive process of composite SCB is in accordance with that of polycrystalline silicon SCB basically, and after erupting, especially at the high voltage, the current of composite SCB decreases, and is lower than that of polycrystalline silicon SCB. The time of the erupting of composite SCB is longer than that slightly. The energy acted on the plasma of composite SCB is a little larger than that of polycrystalline silicon SCB, and the energy acted on the plasma of compound SCB increases more than that of polycrystalline silicon SCB in 3 μs after erupting, so the ignition reliability of composite SCB is better than that of compsite SCB. The primary cause, which results in the differences above, is the metallic film on composite SCB.