CHINESE JOURNAL OF ENERGETIC MATERIALS
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Growth-induced Dislocation of RDX Single Crystal
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(Institute of Chemical Materials, CAEP, Mianyang 621900, China)

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    Abstract:

    Bulk (about 40 mm×40 mm×30 mm) single crystal of cyclotrimethylene trinitramine (RDX) were prepared from acetone saturated solution by solvent evaporation techniques. Single crystal was cut by diamond wire cutter along some oriented crystal plane and variable thickness single crystal slices were obtained. The growth-induced dislocation in RDX single crystals was estimated by high-resolution X-ray Triple Axis diffraction (TAXRD) rocking curve (ω-scan), and the full width at half maximum (FWHM) of (210), (200) and (111) planes were 35.35, 45.31 and 77.92 arcsec respectively. It can be concluded that the dislocation density in (111) plane is largest, while (210) crystal plane is least, and the growth of (111) crystal plane is fastest quickest, while (210) crystal plane is slowest.

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周小清,李洪珍,徐容,等. RDX单晶的生长诱导位错表征[J].含能材料,2013,21(3):301-305.
ZHOU Xiao-qing, LI Hong-zhen, XU Rong, et al. Growth-induced Dislocation of RDX Single Crystal[J]. Chinese Journal of Energetic Materials,2013,21(3):301-305.

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History
  • Received:May 15,2012
  • Revised:September 03,2012
  • Adopted:August 21,2012
  • Online: June 24,2013
  • Published: