The composite semiconductor bridge (SCB) electrical-explosive device (EED) with excellent performances of low ignition energy, short ignition time, high security and high energy output in comparison with polycrystalline silicon semiconductor bridge, is a new type ignition product obtained by a reactive materials-semiconductor bridge combination, using a modern microelectronic technology. The research progress, advantages and weaknesses of the composite semiconductor bridge EED were reviewed. In order to increase the ignition energy of SCB to provide a viable basis and reference, the structure features, reactive materials, ignition conditions and output performance of the multi-layer composite film ignition bridge were comparatively analyzed. Considering that the multi-layer composite semiconductor bridge EED is ideal improvement products of polycrystalline silicon SCB, having a wider range of application and prospects.