CHINESE JOURNAL OF ENERGETIC MATERIALS
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Ignition Characteristics of Non-electrostatic Discharge and Electrostatic Discharge on Semiconductor Bridge
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Nanjing University of Science and Technology,Nanjing University of Science and Technology,Nanjing University of Science and Technology,Nanjing University of Science and Technology,Nanjing University of Science and Technology,Nanjing University of Science and Technology

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    Abstract:

    D-optimal method was employed in the experiments of semiconductor bridge (SCB) ignition. The SCB with and without electrostatic discharge (ESD) were used to ignite lead styphnate (LTNR). The ignition voltage, current and time were obtained by oscillograph, and the deck ablation area of SCB was measured by microscope. It was found the ESD could do some damage on SCB, and the higher ESD, the greater deck ablation area is. Compared with the non-ESD SCB, the ignition voltage and energy of ESD SCB were lower, which means that the ESD SCB was more sensitive. The ignition energy and ignition time were measured by t-test, which showed that the ESD of 21 kV was the critical point. With higher than 21 kV, ESD had greater effect on SCB, and the lower, the less.

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郭晓荣,朱顺官,张琳,等.半导体桥静电作用前后点火特性[J].含能材料,2012,20(1):99-104.
GUO Xiao-rong, ZHU Shun-guan, ZHANG Lin, et al. Ignition Characteristics of Non-electrostatic Discharge and Electrostatic Discharge on Semiconductor Bridge[J]. Chinese Journal of Energetic Materials,2012,20(1):99-104.

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History
  • Received:January 21,2011
  • Revised:March 06,2011
  • Adopted:March 22,2011
  • Online: February 23,2012
  • Published: