CHINESE JOURNAL OF ENERGETIC MATERIALS
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Effect of V-type Angle and Hole of Semiconductor Bridge on Electro-explosive Performance
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    Abstract:

    Fourteen kinds of SCBs with V-type angle and hole were designed,and the electro-explosive performances including the function time,energy required were investigated with firing by capacitor discharge circuit. The plasma firing mechanism of SCB was analyzed. Results indicate that the function time and the energy required decrease significantly for SCB firing with the V-type angle on the SCB decreasing,while the holes have a little effect on the explosive performance of SCB.

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周彬,毛国强,秦志春,等.半导体桥上尖角、圆孔对其电爆性能的影响(英)[J].含能材料,2009,17(3):349-352.
ZHOU Bin, MAO Guo-qiang, QIN Zhi-chun, et al. Effect of V-type Angle and Hole of Semiconductor Bridge on Electro-explosive Performance[J]. Chinese Journal of Energetic Materials,2009,17(3):349-352.

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History
  • Received:July 28,2008
  • Revised:January 06,2009
  • Adopted:
  • Online: November 04,2011
  • Published: June 25,2009