CHINESE JOURNAL OF ENERGETIC MATERIALS
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Initiation Technique of Semiconductor Bridge (SCB) Slapper
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    Abstract:

    Parameters of silicon semiconductor chip and bridge section were designed and optimized. The initiation of HNS-Ⅳexplosive with SCB lapper was carried out and the factors influencing firing energy were studied. Results show that when thickness of SCB slapper with good compactness of polycrystalline silicon is 4 μm, the 50% firing energy is low, and initiation compactness is good.

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杨振英,杨树彬,王新才,等.半导体桥(SCB)冲击片起爆技术研究[J].含能材料,2007,15(2):131-133.
YANG Zhen-ying, YANG Shu-bin, WANG Xin-cai, et al. Initiation Technique of Semiconductor Bridge (SCB) Slapper[J]. Chinese Journal of Energetic Materials,2007,15(2):131-133.

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History
  • Received:August 24,2006
  • Revised:
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  • Online: October 31,2011
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