Initiation Technique of Semiconductor Bridge (SCB) Slapper
Author:
Affiliation:
Fund Project:
Article
|
Figures
|
Metrics
|
Reference
|
Related
|
Cited by
|
Materials
Abstract:
Parameters of silicon semiconductor chip and bridge section were designed and optimized. The initiation of HNS-Ⅳexplosive with SCB lapper was carried out and the factors influencing firing energy were studied. Results show that when thickness of SCB slapper with good compactness of polycrystalline silicon is 4 μm, the 50% firing energy is low, and initiation compactness is good.
Reference
Related
Cited by
0
Article Metrics
PDF:
HTML:
Abstract:
Cited by:
Get Citation
杨振英,杨树彬,王新才,等.半导体桥(SCB)冲击片起爆技术研究[J].含能材料,2007,15(2):131-133. YANG Zhen-ying, YANG Shu-bin, WANG Xin-cai, et al. Initiation Technique of Semiconductor Bridge (SCB) Slapper[J]. Chinese Journal of Energetic Materials,2007,15(2):131-133.