CHINESE JOURNAL OF ENERGETIC MATERIALS
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RDX单晶的生长诱导位错表征
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(中国工程物理研究院化工材料研究所, 四川 绵阳 621900)

作者简介:

李洪珍(1971-),女,研究员,主要从事含能材料合成及结晶研究。e-mail: happyhongzhen@163.com

通讯作者:

周小清(1977-),女,助研,主要从事含能材料合成及结晶研究。e-mail: zhxq_a@yahoo.cn

基金项目:

国家自然科学基金面上项目(No.11072225)和中国工程物理研究院面上基金(No:2010B0302040,2011B0201032)


Growth-induced Dislocation of RDX Single Crystal
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(Institute of Chemical Materials, CAEP, Mianyang 621900, China)

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    摘要:

    采用溶剂蒸发法,以丙酮为溶剂,在一定结晶条件下可获得晶体质量好的厘米级RDX大单晶(约40 mm×40 mm×30 mm)。用高分辨X射线三晶衍射(TAXRD)摇摆曲线(ω扫描)研究了RDX单晶的生长诱导位错,用Split Pearson Ⅶ分析函数并对摇摆曲线进行了拟合,得到(210)、(200)和(111)晶面的摇摆曲线半高宽(FWHM),其值分别为35.35 arcsec, 45.31 arcsec和77.92 arcsec,说明(111)晶面的位错密度最大,线生长速度最快; (210)晶面的位错密度最小,线生长速度最慢,RDX单晶呈现出各向异性。

    Abstract:

    Bulk (about 40 mm×40 mm×30 mm) single crystal of cyclotrimethylene trinitramine (RDX) were prepared from acetone saturated solution by solvent evaporation techniques. Single crystal was cut by diamond wire cutter along some oriented crystal plane and variable thickness single crystal slices were obtained. The growth-induced dislocation in RDX single crystals was estimated by high-resolution X-ray Triple Axis diffraction (TAXRD) rocking curve (ω-scan), and the full width at half maximum (FWHM) of (210), (200) and (111) planes were 35.35, 45.31 and 77.92 arcsec respectively. It can be concluded that the dislocation density in (111) plane is largest, while (210) crystal plane is least, and the growth of (111) crystal plane is fastest quickest, while (210) crystal plane is slowest.

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引用本文

周小清,李洪珍,徐容,等. RDX单晶的生长诱导位错表征[J].含能材料, 2013, 21(3):301-305.
ZHOU Xiao-qing, LI Hong-zhen, XU Rong, et al. Growth-induced Dislocation of RDX Single Crystal[J]. Chinese Journal of Energetic Materials, 2013, 21(3):301-305.

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历史
  • 收稿日期: 2012-05-15
  • 最后修改日期: 2012-09-03
  • 录用日期: 2012-08-21
  • 在线发布日期: 2013-06-24
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