CHINESE JOURNAL OF ENERGETIC MATERIALS
+高级检索
平面集成TVS二极管对半导体桥火工品换能元性能的影响因素
作者:
作者单位:

南京理工大学化学与化工学院, 江苏 南京 210094

作者简介:

通讯作者:

基金项目:


Impact Factors of Planar Integrated TVS diodes on the Performance of Semiconductor Bridge Initiator Transducers
Author:
Affiliation:

School of Chemistry and Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China

Fund Project:

  • 摘要
  • |
  • 图/表
  • |
  • 访问统计
  • |
  • 参考文献
  • |
  • 相似文献
  • |
  • 引证文献
  • |
  • 资源附件
    摘要:

    为探究平面集成瞬态抑制二极管(TVS)对半导体桥火工品换能元性能的影响因素以及规律,通过电容放电发火实验,研究了平面集成TVS二极管的并联数量与击穿电压对半导体桥火工品换能元的电爆性能,并通过500 pF/500 Ω/25 kV静电放电实验,研究了其对半导体桥火工品换能元的静电可靠性能的影响。结果表明,当激励能量使单个平面集成TVS二极管单位时间吸收的能量接近上限时,增加平面集成TVS二极管并联数量会延长SCB火工品换能元的爆发时间,影响半导体桥(SCB)火工品换能元正常爆发,反之,若激励能量不足以使单个平面集成TVS二极管单位时间吸收的能量接近其上限,则SCB火工品换能元爆发性能不会随并联平面集成TVS二极管的数量变化而变化;当激励电压大于平面集成TVS二极管的击穿电压时,TVS二极管击穿电压越低,SCB火工品换能元的爆发时间越长,爆发能量越大,甚至影响SCB火工品换能元正常爆发;降低平面集成TVS二极管的击穿电压、增加并联数量都能够提高SCB火工品换能元的静电可靠性能;设计桥区尺寸为350 μm(W)×100 μm(L)×2 μm(H)的抗静电集成半导体桥芯片时可以集成两个击穿电压略低于14 V或一个击穿电压略高于7V的TVS二极管。

    Abstract:

    In order to investigate the influence and regularities of planar integrated transient voltage suppressor diodes (TVS) on the performance of anti-static integrated semiconductor bridge initiator transducers, capacitor discharge firing experiments were carried out to study the effect of the parallel quantity of planar integrated TVS diodes and breakdown voltage on the electrical explosion performance. Its influence on the static electrostatic reliability performance of semiconductor bridge initiator transducers were also investigated by 500 pF/500 Ω/25 kV static discharge experiments. The results indicate that when the excitation energy approaches the upper limit of the energy absorbed per unit time by a single planar integrated TVS diode, increasing the number of parallel planar integrated TVS diodes will prolong the burst time of the SCB initiator transducer element, and may even affect the normal bursting of the SCB initiator transducer element. Conversely, if the excitation energy is insufficient to bring the energy absorbed per unit time by a single planar integrated TVS diode close to its upper limit, the bursting performance of the SCB initiator transducer element will not change with the number of parallel planar integrated TVS diodes. When the excitation voltage exceeds the breakdown voltage of the planar integrated TVS diodes, the lower the breakdown voltage of the TVS diode, the longer the burst time of the SCB initiator transducers, and the greater the burst energy, and potentially affecting the normal burst of the SCB initiator transducer element. Reducing the breakdown voltage of the planar integrated TVS diodes and increasing the number of parallel diodes can enhance the electrostatic reliability of the SCB initiator transducers. When designing an antistatic integrated semiconductor bridge chip with dimensions of 350 μm(W)×100 μm(L)×2 μm(H), it is possible to integrate two TVS diodes with breakdown voltages slightly below 14 V, or one with a breakdown voltage slightly above 7 V.

    参考文献
    相似文献
    引证文献
文章指标
  • PDF下载次数:
  • HTML阅读次数:
  • 摘要点击次数:
  • 引用次数:
引用本文

陶禹任,王磊,周彬,等. 平面集成TVS二极管对半导体桥火工品换能元性能的影响因素[J]. 含能材料,DOI:10.11943/CJEM2024112.

复制
历史
  • 收稿日期: 2024-04-25
  • 最后修改日期: 2024-08-19
  • 录用日期: 2024-08-21
  • 在线发布日期: 2024-08-26
  • 出版日期: