In order to investigate the influence and regularities of planar integrated transient voltage suppressor diodes （TVS） on the performance of anti-static integrated semiconductor bridge initiator transducers， capacitor discharge firing experiments were carried out to study the effect of the parallel quantity of planar integrated TVS diodes and breakdown voltage on the electrical explosion performance. Its influence on the static electrostatic reliability performance of semiconductor bridge initiator transducers were also investigated by 500 pF/500 Ω/25 kV static discharge experiments. The results indicate that when the excitation energy approaches the upper limit of the energy absorbed per unit time by a single planar integrated TVS diode， increasing the number of parallel planar integrated TVS diodes will prolong the burst time of the SCB initiator transducer element， and may even affect the normal bursting of the SCB initiator transducer element. Conversely， if the excitation energy is insufficient to bring the energy absorbed per unit time by a single planar integrated TVS diode close to its upper limit， the bursting performance of the SCB initiator transducer element will not change with the number of parallel planar integrated TVS diodes. When the excitation voltage exceeds the breakdown voltage of the planar integrated TVS diodes， the lower the breakdown voltage of the TVS diode， the longer the burst time of the SCB initiator transducers， and the greater the burst energy， and potentially affecting the normal burst of the SCB initiator transducer element. Reducing the breakdown voltage of the planar integrated TVS diodes and increasing the number of parallel diodes can enhance the electrostatic reliability of the SCB initiator transducers. When designing an antistatic integrated semiconductor bridge chip with dimensions of 350 μm（W）×100 μm（L）×2 μm（H）， it is possible to integrate two TVS diodes with breakdown voltages slightly below 14 V， or one with a breakdown voltage slightly above 7 V.