The planar thin film transducer chip was designed with longitudinally integrated PN junction structure diode， and integrated through microelectronics technology for excellent security performance and high integration characteristics. Each of three different-sized chips with 1.0 mm×1.0 mm，1.5 mm×1.5 mm and 2.0 mm×4.0 mm， were designed under four breakdown voltages of 8， 18， 28， 34 V， and two kinds of resistance ，3 Ω and 4 Ω. The ignition tests were carried out on the integrated chip to study the impact of the integrated structure on the burst performance of the transducer. Results from the static electricity of these chips show that the larger the size of the integrated thin film chip is， the stronger the antistatic ability， the greater the resistance in the bridge area of the chip， and the more vulnerable to electrostatic interference are. The electrostatic protection performance of designed chip can reach 500 pF/500 Ω/25 kV. The smaller the breakdown voltage is， the greater the bypass current capacity， the greater the impact on the burst performance of the transducer， and the greater the breakdown voltage， but the smaller the electrostatic protection effect are on the energy converter. For initiating explosive devices to be ignited under 33 μF/16 V， the integrated chip with an 18V breakdown voltage should be selected. Therefore， when the integrated thin film chip is applied， it is necessary to select an appropriate breakdown voltage according to the working voltage of the transducer for both a protection against static interference and a necessary avoidance in failure of its normal function.