CHINESE JOURNAL OF ENERGETIC MATERIALS
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冷压成型压力对HMX基PBX微结构影响的SANS研究
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1.中国工程物理研究院核物理与化学研究所 中物院中子物理重点实验室;2.中国工程物理研究院化工材料研究所

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国家自然科学基金资助 11775195 U1730244 11405152国家自然科学基金资助(11775195,U1730244,11405152)


SANS Investigation on the Effect of Cold-pressed Forming Pressure on the Microstructure of HMX-based PBX
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1.Key Laboratory of Neutron Physics and Institute of Nuclear Physics and Chemistry, CAEP, Mianyang 621999, China;2.Institute of Chemical Materials, CAEP, Mianyang 621999, China

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    摘要:

    为了探索冷压成型压力对高聚物粘结炸药(PBX)微结构的影响,采用衬度变换中子小角散射(SANS)技术测试了不同压力成型奥克托今(HMX)基PBX的中子小角散射信号,利用Porod定理获得了样品中炸药晶体-粘结剂-孔洞三者之间界面面积随成型压力的演化。结果表明,成型压力由64 MPa增加至178 MPa时,样品密度由1.55 g·cm-3增加至1.72 g·cm-3,HMX与粘结剂之间的界面结合率由23.7%增加至26.7%,单位质量PBX内部总界面面积Stotal减小6.1%(实验误差3%),HMX与粘结剂之间的界面面积SHB增加15.2%,HMX与孔洞之间的界面面积SHV基本不变,而粘结剂与孔洞之间的界面面积SBV则下降38.0%,表明这个过程中造型粉和粘结剂被逐渐压实;成型压力由178 MPa增加至382 MPa时,样品密度增加至1.79 g·cm-3,HMX与粘结剂之间的界面结合率增加至42.3%,Stotal减小11.2%,SHB增加49.0%,SHV减少25.8%,SBV下降45.5%,说明这个过程中除了造型粉和粘结剂被压实外,还有大量的粘结剂流动至HMX晶体表面。此外,成型压力由64 MPa增加至382 MPa时,SHVSHB之和(即单位质量PBX样品内HMX炸药晶体总的界面面积)基本保持不变,说明该冷压过程并未导致HMX晶体大量穿晶破碎,这与光学显微观察结果一致。

    Abstract:

    To explore the influence of cold-pressed forming pressure on the microstructure of polymer bonded explosive (PBX), the small angle neutron scattering (SANS) signals of different pressure-formed octogen (HMX)-based PBX were measured by contrast variation SANS technique. The evolution of interfacial surface area between explosive crystal, binder and void in sample with the forming pressure was obtained by Porod’s theorem. Results show that when the forming pressure increases from 64MPa to 178 MPa, the density of sample increases from 1.55g·cm-3 to 1.72 g·cm-3 , and the interfacial binding rate between HMX and binder increases from 23.7% to 26.7%, and the total internal interfacial surface area per unit mass PBX, Stotal decreases by 6.1% (the error of experiment is 3%), and the interfacial surface area between HMX and binder (SHB) increases by 15.2%, and the interfacial surface area between HMX and void (SHV) basically remains unchanged, while the interfacial surface area between binder and void (SBV) decreases by 38.0%, indicating that the modeling powder and binder are gradually compacted during the process. When the forming pressure increases from 178 MPa to 382 MPa, the density of sample increases to 1.79 g·cm-3, and the interfacial binding rate between HMX and binder increases to 42.3%, and Stotal decreases by 11.2%, and SHB increases by 49.0%, and SHV decreases by 25.8%, and SBV decreases by 45.5%, indicating that in this process, except the compaction of modeling powder and binder, a great amount of binder flows to the surface of HMX crystal. In addition, when the forming pressure increases from 64 MPa to 382 MPa, the sum of SHB and SHV (i.e. total internal interfacial surface area per unit mass PBX sample) remains basically unchanged, indicating that the cold-pressed process does not lead to a large number of transcrystalline breakage of HMX crystal, which is consistent with the optical microscopic results.

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白亮飞,田强,屠小青,等.冷压成型压力对HMX基PBX微结构影响的SANS研究[J].含能材料, 2019, 27(10):853-860. DOI:10.11943/CJEM2018256.
BAI Liang-fei, TIAN Qiang, TU Xiao-qing, et al. SANS Investigation on the Effect of Cold-pressed Forming Pressure on the Microstructure of HMX-based PBX[J]. Chinese Journal of Energetic Materials, 2019, 27(10):853-860. DOI:10.11943/CJEM2018256.

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  • 收稿日期: 2018-09-10
  • 最后修改日期: 2019-03-17
  • 录用日期: 2018-11-23
  • 在线发布日期: 2019-03-11
  • 出版日期: 2019-10-25