The porous silicon was prepared by electrochemical etching and it was filled ammonium perchlorate or sodium perchlorate with in-situ method in order to get porous silicon energetic chips. Results show that the thickness of porous silicon layer is 90-100 μm,and these porous silicon layers endure the ultrasonic waves when porous silicon layers are filled ammonium perchlorate or sodium perchlorate into them. These porous silicon energetic chips could explode strongly at 450-470 ℃ in open air. Ammonium perchlorate is better than sodium perchlorate on the preparation of porous silicon energetic chips.